H8NA60FI DATASHEET PDF

H8NA60FI Datasheet PDF Download – STH8NA60FI, H8NA60FI data sheet. H8NA60FI NTE Equvilent NTE POWER MOSFET N-CHANNEL V ID- 14A TO-3P CASE HIGH SPEED SWITCH. NTE Data Sheet Data Sheet. NTE. H8NA60FI Datasheet: N – CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR, H8NA60FI PDF Download STMicroelectronics, H8NA60FI.

Author: Maum Zolokus
Country: Uganda
Language: English (Spanish)
Genre: Politics
Published (Last): 19 August 2015
Pages: 90
PDF File Size: 17.70 Mb
ePub File Size: 8.45 Mb
ISBN: 371-9-21124-182-9
Downloads: 98688
Price: Free* [*Free Regsitration Required]
Uploader: Dojas

Professional international purchasing capacity 3. Static Drain-source On Resistance. We can also ship via registered air mail, Normally will take days to airrive at your office.

Gat e-body Leakage Current V. Switching Safe Operating Area. Normally days via registered air mail Total Price: With 11 years of daasheet experience in distribution in this area, we own a big and professional sale team with members from all over the world.

H8NA60FI price list,H8NA60FI photo|transistor mosfet|

This publication supersedes and replaces all information previously supplied. Source-drain Diode Forward Characteristics. Shipping can be combined if h8ns60fi quantities are purchased. Return it and get a full refund, or B: Normalized On Resistance vs Temperature.

  BAHAS TUNTAS 1001 SOAL FISIKA SMP PDF

Other freight methods may be available at checkout – you can also contact me first for details.

Turn-on Time Rise Time. C unless otherwise specified.

Our company has our own inventory in large quantity that can meet all of your requirements and needs. All major Credit and Debit cards via PayPal. Please choose your preferred shipping method when checking datashest on our website. Packaging should be the same as what is found in a retail store, unless the item is handmade or was packaged by the manufacturer in non-retail packaging, such as an unprinted box or plastic bag.

We have won the affirmation of international markets for good prices, fast delivery and guaranteed quantity.

【H8NA60F1 ST】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA

Datasheet or technical specification in PDF format is available on request for download. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.

In Stock Can ship immediately Price: Turn-off Drain-source Voltage Slope. Gate Charge vs Gate-source Voltage. Paypal accepted, order online today!

We sincerely look forward to establishing business relationship with you in the future.

  CONVOCATORIA PRONABES OAXACA 2011 PDF

H8NA60FI View Datasheet(PDF) – STMicroelectronics

If you don’t receive the item in 25 days, just let us know,a new package or replacement will be issued. We sell High-power transistors, darlington power transistors, high-voltage transistors, high-frequency, high-gain transistors, switching transistors, RF, small-signal transistors, SCR, triac, mosfet, three-terminal regulator, IC, thick-film hybrid integrated circuits and so on.

Gate Charge test Circuit. Gat e Threshold Voltage V. Source-drain Current Source-drain Current pulsed. Images are for reference only See Product Specifications. Datasheeet your shipping address and preferred shipping method. We will then send you full instructions by email We never store your card details, these remain with Paypal.

NTE – MOSFET N-Channel Enhancement, V 14A

Drain Current continuous at T. Items will be shipped within business days of payment. Pulse width limited by safe operating area. G ate-source Volt age. Timely product updates, keen market h8n60fi 5. On State Drain Current.