H8NA60FI Datasheet PDF Download – STH8NA60FI, H8NA60FI data sheet. H8NA60FI NTE Equvilent NTE POWER MOSFET N-CHANNEL V ID- 14A TO-3P CASE HIGH SPEED SWITCH. NTE Data Sheet Data Sheet. NTE. H8NA60FI Datasheet: N – CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR, H8NA60FI PDF Download STMicroelectronics, H8NA60FI.
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This publication supersedes and replaces all information previously supplied. Source-drain Diode Forward Characteristics. Shipping can be combined if h8ns60fi quantities are purchased. Return it and get a full refund, or B: Normalized On Resistance vs Temperature.
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Turn-on Time Rise Time. C unless otherwise specified.
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【H8NA60F1 ST】Electronic Components In Stock Suppliers in 2018【Price】【Datasheet PDF】USA
Datasheet or technical specification in PDF format is available on request for download. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics.
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H8NA60FI View Datasheet(PDF) – STMicroelectronics
If you don’t receive the item in 25 days, just let us know,a new package or replacement will be issued. We sell High-power transistors, darlington power transistors, high-voltage transistors, high-frequency, high-gain transistors, switching transistors, RF, small-signal transistors, SCR, triac, mosfet, three-terminal regulator, IC, thick-film hybrid integrated circuits and so on.
Gate Charge test Circuit. Gat e Threshold Voltage V. Source-drain Current Source-drain Current pulsed. Images are for reference only See Product Specifications. Datasheeet your shipping address and preferred shipping method. We will then send you full instructions by email We never store your card details, these remain with Paypal.
NTE – MOSFET N-Channel Enhancement, V 14A
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